Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium
US11075114B2 · kind B2 · utility
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2References
19Claims
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Key dates
| Filing date | Aug 29, 2019 |
| Grant date | Jul 27, 2021 |
| Priority date | — |
| Expiry date | Aug 29, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/67253
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
There is provided a technique which includes (a) forming a seed layer on a substrate by supplying a first process gas to the substrate at a first temperature, (b) forming a film on the seed layer by supplying a second process gas to the substrate at a second temperature, and (c) annealing the seed layer and the film at a third temperature, wherein at least one selected from the group of a crystal grain size and a surface roughness of the film after performing the annealing in (c) is adjusted by controlling a thickness of the seed layer formed in (a).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.