Methods and apparatus for forming dual metal interconnects

US11075165B2 · kind B2 · utility

Assignee

• Applied Materials, Inc. · US

Inventors

• Suketu Arun Parikh · San Jose, US
• Rong Tao · San Jose, US
• Roey Shaviv · Palo Alto, US
• Joung Joo Lee · San Jose, US
• Seshadri Ganguli · Sunnyvale, US
• Shirish A. PETHE · Cupertino, US
• David Maxwell Gage · Sunnyvale, US
• Jianshe Tang · San Jose, US
• Michael Stolfi · Clifton Park, US

Key dates

• Filing date: Jul 19, 2019
• Grant date: Jul 27, 2021
• Expiry date: Jul 19, 2039

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L23/53266
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Methods and apparatus for creating a dual metal interconnect on a substrate. In some embodiments, a first liner of a first nitride material is deposited into at least one 1× feature and at least one wider than 1× feature, the first liner has a thickness of less than or equal to approximately 12 angstroms; a second liner of a first metal material is deposited into the at least one 1× feature and at least one wider than 1× feature; the first metal material is reflowed such that the at least one 1× feature is filled with the first metal material and the at least one wider than 1× feature remains unfilled with the first metal material; a second metal material is deposited on the first metal material, and the second metal material is reflowed such that the at least one wider than 1× feature is filled with the second metal material.