Process for producing a component comprising III-V materials and contacts compatible with silicon process flows

US11075501B2 · kind B2 · utility

Assignee

• COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES · FR

Inventors

• Elodie Ghegin · Le Versoud, FR
• Christophe Jany · Saint-Égrève, FR
• Fabrice Nemouchi · Moirans, FR
• Philippe Rodriguez · Grenoble, FR
• Bertrand Szelag · Grenoble, FR

Key dates

• Filing date: Dec 22, 2017
• Grant date: Jul 27, 2021
• Expiry date: Dec 26, 2037

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10F39/103
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A process for producing a component includes a structure made of III-V material(s) on the surface of a substrate, the structure comprising at least one upper contact level defined on the surface of a first III-V material and a lower contact level defined on the surface of a second III-V material, comprising: successive operations of encapsulation of the structure with at least one dielectric; making primary apertures in a dielectric for the two contacts; making secondary apertures in a dielectric for the two contacts; at least partial filling of the apertures with at least one metallic material so as to produce upper contact bottom metallization and at least one upper contact pad in contact with the metallization for each of said contacts. A component produced by the process is also provided. The component may be a laser diode.