Method and apparatus for repairing defects of a photolithographic mask for the EUV range
US11079673B2 · kind B2 · utility
0Cited by
2References
30Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 30, 2018 |
| Grant date | Aug 3, 2021 |
| Priority date | — |
| Expiry date | Jan 26, 2039 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG06F30/39
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
The invention relates to a method and an apparatus for repairing at least one defect of a photolithographic mask for the extreme ultraviolet (EUV) wavelength range, wherein the method includes the steps of: (a) determining the at least one defect; and (b) ascertaining a repair shape for the at least one defect; (c) wherein the repair shape is diffraction-based in order to take account of a phase disturbance by the at least one defect.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.