Reverse sensing for data recovery in non-volatile memory structures
US11081190B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | May 22, 2020 |
| Grant date | Aug 3, 2021 |
| Priority date | — |
| Expiry date | May 22, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B43/27
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method for data recovery in a memory array of a non-volatile memory system, wherein the method comprises detecting an electrical short between a word line (WL) of a memory cell transistor and a local source line (LI) of a memory structure of the array, increasing an initial voltage bias at the local source line to a second voltage bias that exceeds a threshold voltage of the shorted memory cell transistor and a voltage level of a bit line of the memory structure, thereby causing a sensing current to flow in a direction from the local source line to the bit line, and sensing at a sense amplifier of the memory structure the sensing current.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.