Sputtering target and method for manufacturing the same
US11081326B2 · kind B2 · utility
1Cited by
36References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 6, 2017 |
| Grant date | Aug 3, 2021 |
| Priority date | — |
| Expiry date | Jul 30, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/80
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A novel metal oxide or a novel sputtering target is provided. A sputtering target includes a conductive material and an insulating material. The insulating material includes an oxide, a nitride, or an oxynitride including an element M1. The element M1 is one or more kinds of elements selected from Al, Ga, Si, Mg, Zr, Be, and B. The conductive material includes an oxide, a nitride, or an oxynitride including indium and zinc. A metal oxide film is deposited using the sputtering target in which the conductive material and the insulating material are separated from each other.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.