Method of manufacturing semiconductor device
US11081389B2 · kind B2 · utility
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3References
20Claims
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Key dates
| Filing date | Dec 12, 2019 |
| Grant date | Aug 3, 2021 |
| Priority date | — |
| Expiry date | Dec 12, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/0149
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of manufacturing a semiconductor device, the method including providing a metal precursor on a substrate to form a preliminary layer that includes a first metal; providing a reducing agent on the preliminary layer, the reducing agent including a compound that includes a second metal; and providing a reactant on the preliminary layer to form a metal-containing layer, wherein the second metal has multiple oxidation states, the second metal in the reducing agent having a lower oxidation state among the multiple oxidation states prior to providing the reducing agent on the preliminary layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.