Semiconductor device and method for manufacturing the same
US11081401B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 29, 2019 |
| Grant date | Aug 3, 2021 |
| Priority date | — |
| Expiry date | Nov 29, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/797
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for manufacturing a semiconductor device, includes: forming a shallow trench isolation structure surrounding a first semiconductor fin and a second semiconductor fin; forming a dummy gate structure across the first and second semiconductor fins; forming a first flowable dielectric layer over the first and second semiconductor fins; curing the first flowable dielectric layer at a first temperature; removing a first portion of the cured first flowable dielectric layer from above the second semiconductor fin; after removing the first portion of the cured first flowable dielectric layer, forming a second flowable dielectric layer over the second semiconductor fin; curing the second flowable dielectric layer at a second temperature different from the first temperature; and replacing the dummy gate structure with a metal gate structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.