Patent · US Active

IGBT module with heat dissipation structure having ceramic layers corresponding in position and in area to chips

US11081421B2 · kind B2 · utility

0Cited by

1References

7Claims

0Family size

Assignee

AMULAIRE THERMAL TECHNOLOGY, INC. · TW

Inventors

Tzu-Hsuan Wang · Taoyuan, TW
TZE-YANG YEH · New Taipei, TW
Chun-Lung Wu · Taichung, TW

Key dates

Filing date	Dec 12, 2019
Grant date	Aug 3, 2021
Priority date	—
Expiry date	Dec 19, 2039

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2924/3512
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

An IGBT module with a heat dissipation structure includes a first layer of chips, a second layer of chips, a first bonding layer, a second bonding layer, a first copper layer, a second copper layer, a first polymer composite layer, a second polymer composite layer, a first ceramic layer, a second ceramic layer, and a heat dissipation layer. The first ceramic layer is partially formed on the heat dissipation layer and corresponds in position and in area to the first layer of chips, and the second ceramic layer is partially formed on the heat dissipation layer and corresponds in position and in area to the second layer of chips.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.