LDMOS with high-k drain STI dielectric
US11081558B2 · kind B2 · utility
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3References
22Claims
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Key dates
| Filing date | Mar 8, 2020 |
| Grant date | Aug 3, 2021 |
| Priority date | — |
| Expiry date | Mar 8, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/378
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A laterally diffused metal oxide silicon (LDMOS) transistor and a method of making the LDMOS transistor are disclosed. The LDMOS transistor includes a drain drift region formed in a substrate and containing a drain contact region. A gate structure overlies a channel region in the substrate and a first shallow-trench isolation (STI) structure located between the drain contact region and the channel region. The first STI structure contains a high-k dielectric and a second STI structure contains silicon oxide.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.