GaN transistor with integrated drain voltage sense for fast overcurrent and short circuit protection
US11082039B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 8, 2017 |
| Grant date | Aug 3, 2021 |
| Priority date | — |
| Expiry date | Nov 9, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/817
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A GaN power switching device comprises a GaN transistor switch SW_MAIN has an integrated drain voltage sense circuit, which comprises GaN sense transistor SW_SEN and GaN sense resistor RSEN, which at turn-on form a resistive divider for sensing the drain voltage of SW_MAIN to provide a drain voltage sense output VDSEN. Fault detection logic circuitry of a driver circuit generates a fault signal FLT when VDSEN reaches or exceeds a reference voltage Vref, which triggers fast turn-off of the gate of SW_MAIN, e.g. within less than 100 ns of an overcurrent or short circuit condition. During turn-off, RSEN resets VDSEN to zero. For two stage turn-off, the driver circuit further comprises fast soft turn-off circuitry which is triggered first by the fault signal to pull-down the gate voltage to the threshold voltage, followed by a delay before full turn-off of the gate of SW_MAIN by the gate driver.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.