GaN Systems Inc.
49Patents
49Active
49Granted
58Portfolio score
Filing activity: Aug 4, 2010 → Oct 25, 2023 · 3 expiring within 5 years
Most-cited patents
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US9525413B2 | Power switching systems comprising high power e-mode GaN transistors and driver circuitry | Electricity | 21 | Active |
| US8791508B2 | High density gallium nitride devices using island topology | Electricity | 17 | Active |
| US9589868B2 | Packaging solutions for devices and systems comprising lateral GaN power transistors | Electricity | 16 | Active |
| US9659854B2 | Embedded packaging for devices and systems comprising lateral GaN power transistors | Electricity | 14 | Active |
| US9029866B2 | Gallium nitride power devices using island topography | Electricity | 9 | Active |
| US9064947B2 | Island matrixed gallium nitride microwave and power switching transistors | Electricity | 9 | Active |
| US9589869B2 | Packaging solutions for devices and systems comprising lateral GaN power transistors | Electricity | 9 | Active |
| US10529802B2 | Scalable circuit-under-pad device topologies for lateral GaN power transistors | Electricity | 9 | Active |
| US9105560B2 | Devices and systems for power conversion circuits | Electricity | 8 | Active |
| US9818692B2 | GaN semiconductor device structure and method of fabrication by substrate replacement | Electricity | 7 | Active |
| US9153509B2 | Fault tolerant design for large area nitride semiconductor devices | Electricity | 7 | Active |
| US10218346B1 | High current lateral GaN transistors with scalable topology and gate drive phase equalization | Electricity | 6 | Active |
| US9660639B2 | Distributed driver circuitry integrated with GaN power transistors | Electricity | 6 | Active |
| US9692408B2 | Devices and systems comprising drivers for power conversion circuits | Electricity | 5 | Active |
| US9824949B2 | Packaging solutions for devices and systems comprising lateral GaN power transistors | Electricity | 5 | Active |
| US10283501B2 | GaN-on-Si semiconductor device structures for high current/ high voltage lateral GaN transistors and methods of fabrication thereof | Electricity | 4 | Active |
| US9508797B2 | Gallium nitride power devices using island topography | Electricity | 4 | Active |
| US10249506B2 | GaN-on-si semiconductor device structures for high current/ high voltage lateral GaN transistors and methods of fabrication thereof | Electricity | 3 | Active |
| US11183440B2 | Power modules for ultra-fast wide-bandgap power switching devices | Electricity | 3 | Active |
| US10290623B2 | Gate input protection for devices and systems comprising high power E-mode GaN transistors | Electricity | 2 | Active |
| US11463012B1 | Architecture for multi-port AC/DC switching mode power supply | Emerging Cross-Sectional Technologies | 2 | Active |
| US11527460B2 | Device topologies for high current lateral power semiconductor devices | Electricity | 2 | Active |
| US11515235B2 | Device topology for lateral power transistors with low common source inductance | Electricity | 2 | Active |
| US11342248B2 | Embedded die packaging for power semiconductor devices | Electricity | 2 | Active |
| US11735492B2 | Power modules for ultra-fast wide-bandgap power switching devices | Electricity | 1 | Active |
Source: USPTO / EPO open patent data. Counts and citation impact are objective bibliographic measures.