Method of screening materials using forward conducting modes
US11087055B2 · kind B2 · utility
1Cited by
7References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 21, 2018 |
| Grant date | Aug 10, 2021 |
| Priority date | — |
| Expiry date | Aug 10, 2038 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG06F2111/10
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method for characterizing a material for use in a semiconductor device and the semiconductor device using the material are described. The material has a unit cell and a crystal structure. The method includes determining a figure of merit (FOM) for the material using only forward conducting modes for the unit cell. The FOM is a resistivity multiplied by a mean free path. The FOM may be used to determine a suitability of the material for use in the semiconductor device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.