Data storage device with voltage-assisted magnetic recording (VAMR) for high density magnetic recording
US11087791B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | May 5, 2020 |
| Grant date | Aug 10, 2021 |
| Priority date | — |
| Expiry date | May 5, 2040 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11B2005/0034
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A data storage drive includes a magnetic recording media comprising a ferroelectric layer between a bottom electrode layer and a top electrode layer. An applied voltage to the ferroelectric layer generates a strain that is transferred to a ferromagnetic recording layer formed proximate to the ferroelectric layer. The change in strain transferred to the recording layer changes the magnetic properties of the recording layer. A voltage can be selectively applied to all or part of the ferroelectric layer to place the ferromagnetic recording layer in a low coercivity state to assist in writing data. Voltage-assisted magnetic recording (VAMR) is provided based upon control of a magnetic recording media comprising a ferroelectric layer between a bottom electrode layer and a top electrode layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.