Semiconductor device and method
US11087987B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 1, 2019 |
| Grant date | Aug 10, 2021 |
| Priority date | — |
| Expiry date | Aug 8, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/822
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In an embodiment, a method includes: forming a first fin extending from a substrate, the substrate including silicon, the first fin including silicon germanium; forming an isolation region around the first fin, an oxide layer being formed on the first fin during formation of the isolation region; removing the oxide layer from the first fin with a hydrogen-based etching process, silicon at a surface of the first fin being terminated with hydrogen after the hydrogen-based etching process; desorbing the hydrogen from the silicon at the surface of the first fin to depassivate the silicon; and exchanging the depassivated silicon at the surface of the first fin with germanium at a subsurface of the first fin.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.