Forming a thin film resistor (TFR) in an integrated circuit device
US11088024B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jun 24, 2019 |
| Grant date | Aug 10, 2021 |
| Priority date | — |
| Expiry date | Jun 24, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/811
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method is provided for forming a thin film resistor (TFR) in an integrated circuit (IC) including IC elements, e.g., memory components. A first contact etch stop layer is formed over the IC elements. A TFR layer stack including a TFR etch stop layer, a TFR film layer, and a second contact etch stop layer is formed over the first contact etch stop layer, and in some cases over one or more pre-metal dielectric layers. A patterned mask is formed over the IC stack, and the stack is etched, through both the first and second contact etch stop layers, to simultaneously form (a) first contact openings exposing contact regions of the IC elements and (b) second contact opening(s) exposing the TFR film layer. The first and second contact openings are filled with conductive material to form conductive contacts to the IC elements and the TFR film layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.