Transistor structure

US11088027B2 · kind B2 · utility

Assignee

• UNITED MICROELECTRONICS CORP. · TW

Inventors

• Shih-Yin Hsiao · Zhongpu, TW
• Ching-Chung Yang · Hsinchu, TW
• Kuan-Liang Liu · Hengshan, TW

Key dates

• Filing date: Sep 3, 2020
• Grant date: Aug 10, 2021
• Expiry date: Sep 3, 2040

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/60

Abstract

A transistor structure includes a source region and a drain region disposed in a substrate, extending along a first direction. A polysilicon layer is disposed over the substrate, extending along a second direction perpendicular to the first direction, wherein the polysilicon layer includes a first edge region, a channel region and a second edge region formed as a gate region between the source region and the drain region in a plane view. The polysilicon layer has at least a first opening pattern at the first edge region having a first portion overlapping with the gate region; and at least a second opening pattern at the second edge region having a second portion overlapping with the gate region.