Method to enable 30 microns pitch EMIB or below
US11088062B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 19, 2017 |
| Grant date | Aug 10, 2021 |
| Priority date | — |
| Expiry date | Sep 24, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/15311
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A package substrate and package assembly including a package substrate including a substrate body including electrical routing features therein and a surface layer and a plurality of first and second contact points on the surface layer including a first pitch and a second pitch, respectively, wherein the plurality of first contact points and the plurality of second contact points are continuous posts to the respective ones of the electrical routing features. A method including forming first conductive vias in a package assembly, wherein the first conductive vias include substrate conductive vias to electrical routing features in a package substrate and bridge conductive vias to bridge surface routing features of a bridge substrate; forming a first surface layer and a second surface layer on the package substrate; and forming second conductive vias through each of the first surface layer and the second surface layer to the bridge conductive vias.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.