Method of manufacturing an electronic component including multiple quantum dots
US11088259B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 16, 2019 |
| Grant date | Aug 10, 2021 |
| Priority date | — |
| Expiry date | Jun 13, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/27
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A method of fabricating an electronic component with multiple quantum islands is provided, including supplying a substrate on which rests a nanowire made of semiconductor material not intentionally doped, the nanowire having at least two main control gates resting thereon so as to form respective qubits in the nanowire under the two main control gates, the two main control gates being separated by a groove, top and lateral faces of the two main control gates and a bottom of the groove being covered by a dielectric layer; depositing a conductive material in the groove and on the top of the two main control gates; and planarizing down to the dielectric layer on the top of the two main control gates, so as to obtain an element made of conductive material self-aligned between the main control gates.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.