Patent · US Active

Method for operating a superjunction transistor device

US11088275B2 · kind B2 · utility

0Cited by

0References

20Claims

0Family size

Assignee

Infineon Technologies Austria AG · AT

Inventors

Hans Weber · Villach, AT
Christian Fachmann · Graz, AT
Franz Hirler · Isen, DE
Matteo-Alessandro Kutschak · Ludmannsdorf, DE
Andreas Riegler · Tenneck, AT

Key dates

Filing date	Mar 6, 2020
Grant date	Aug 10, 2021
Priority date	—
Expiry date	Mar 6, 2040

Classification

Technology area (CPC H)Electricity
CPC primaryH10D64/117
WIPO fieldBasic communication processes
WIPO sectorElectrical engineering

Abstract

A method for operating a superjunction transistor device and a transistor arrangement are disclosed. The method includes operating the superjunction transistor device in a diode state. Operating the superjunction transistor device in the diode state includes applying a bias voltage different from zero between a drift region of at least one transistor cell of the superjunction transistor device and a compensation region of a doping type complementary to a doping type of the drift region. The compensation region adjoins the drift region, and a polarity of the bias voltage is such that a pn-junction between the drift region and the compensation region is reverse biased.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.