Plasma processing apparatus
US11094509B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 20, 2017 |
| Grant date | Aug 17, 2021 |
| Priority date | — |
| Expiry date | Mar 24, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/67069
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
The features of the present invention are that a plasma processing apparatus includes: a process chamber in which a sample is plasma-processed; a dielectric window which airtightly seals an upper part of the process chamber; an inductive antenna which is disposed at an upper part of the dielectric window and forms an induction magnetic field; a radio frequency power source which supplies radio frequency power to the inductive antenna; and a Faraday shield to which radio frequency power is supplied from the radio frequency power source and which is disposed between the dielectric window and the inductive antenna, and the plasma processing apparatus further includes a monitoring unit which monitors a current flowing in the Faraday shield and a control unit which controls the monitored current.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.