Processing method for wafer
US11094523B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 26, 2019 |
| Grant date | Aug 17, 2021 |
| Priority date | — |
| Expiry date | Nov 26, 2039 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB23K2103/56
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A processing method for a wafer having a chamfered portion on an outer circumference thereof includes a step of irradiating a laser beam of a transmission wavelength to the wafer along an outer circumferential edge of the wafer at a position on an inner side of a predetermined distance from the outer circumferential edge of the wafer to form an annular modified region having a depth from a front face of the wafer to a finish thickness, a step of irradiating a laser beam of a transmission wavelength to the wafer on an outer circumferential portion of the wafer to radially form a plurality of modified regions having the depth from the front face of the wafer to the finish thickness on the outer circumferential portion of the wafer, and a step of grinding a back face of the wafer to thin the wafer to the finish thickness.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.