Surface oxidation method for wafer
US11094534B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 31, 2019 |
| Grant date | Aug 17, 2021 |
| Priority date | — |
| Expiry date | Oct 31, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/67253
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A surface oxidation method for a wafer, the method comprises: raising a temperature on the wafer in an oxidation atmosphere, the temperature is raised from a start temperature to a target temperature at a temperature raising rate greater than 5° C./min, the temperature is raised in a vertical furnace tube of an annealing furnace, the vertical furnace tube includes a gas intake conduit arranged on a side wall, the gas intake conduit includes a gas inlet arranged to be proximate to a bottom of the vertical furnace tube and a gas outlet arranged to be proximate to a top of the furnace tube, the wafer overlying the vertical furnace tube; and isothermally oxidizing the wafer at the target temperature in the oxidation atmosphere.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.