Shanghai Simgui Technology Co., Ltd.
9Patents
9Active
9Granted
42Portfolio score
Filing activity: Jul 10, 2010 → Oct 31, 2019 · 2 expiring within 5 years
Most-cited patents
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US11158702B2 | Gallium nitride high electron mobility transistor having high breakdown voltage and formation method therefor | Electricity | 0 | Active |
| US10529590B2 | Annealing method for improving bonding strength | Electricity | 0 | Active |
| US8633090B2 | Method for forming substrate with buried insulating layer | Electricity | 0 | Active |
| US10361114B2 | Method for preparing substrate with carrier trapping center | Electricity | 0 | Active |
| US11094534B2 | Surface oxidation method for wafer | Electricity | 0 | Active |
| US10618082B2 | Method for cleaning bonding interface before bonding | Electricity | 0 | Active |
| US9299556B2 | Method for preparing semiconductor substrate with insulating buried layer gettering process | Electricity | 0 | Active |
| US10388529B2 | Method for preparing substrate with insulated buried layer | Electricity | 0 | Active |
| US11393772B2 | Bonding method for semiconductor substrate, and bonded semiconductor substrate | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Counts and citation impact are objective bibliographic measures.