Multicolor self-aligned contact selective etch

US11094589B2 · kind B2 · utility

Assignee

• Applied Materials, Inc. · US

Inventors

• Yung-Chen Lin · Los Angeles, US
• Qingjun Zhou · Sunnyvale, US
• Ying Zhang · Santa Clara, US
• Ho-yung David Hwang · Hsinchu, TW

Key dates

• Filing date: Mar 12, 2019
• Grant date: Aug 17, 2021
• Expiry date: Jan 10, 2040

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/76834
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Methods of forming and processing semiconductor devices which utilize the selective etching of aluminum oxide over silicon oxide, silicon nitride, aluminum oxide or zirconium oxide are described. Certain embodiments relate to the formation of self-aligned contacts for metal gate applications.