Apparatuses including stacked horizontal capacitor structures and related methods, memory devices, and electronic systems
US11094699B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | May 28, 2020 |
| Grant date | Aug 17, 2021 |
| Priority date | — |
| Expiry date | May 28, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/43
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
An apparatus includes fin structures comprising individual levels of a conductive material having elongated portions extending in a first horizontal direction, first conductive lines extending in a second horizontal direction transverse to the first horizontal direction, and second conductive lines extending in a vertical direction transverse to each of the first horizontal direction and the second horizontal direction. At least portions of the first conductive lines are aligned vertically. The apparatus also includes horizontal capacitor structures comprising the conductive material of the fin structures and access devices proximate intersections of the first conductive lines and the second conductive lines. The access devices comprise the conductive material of the fin structures. Memory devices, electronic systems, and methods of forming the apparatus are also disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.