Three-dimensional memory device with source contacts connected by an adhesion layer and methods for forming the same
US11094713B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 20, 2019 |
| Grant date | Aug 17, 2021 |
| Priority date | — |
| Expiry date | Nov 20, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B43/35
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A three-dimensional (3D) memory device includes a memory stack over a substrate. The memory stack includes interleaved conductor layers and insulating layers. The 3D memory device also includes channel structures extending vertically in the memory stack. The 3D memory device further includes a source structure extending in the memory stack. The source structure includes first and second source contacts separated by a support structure. The source structure also includes an adhesion layer. At least a portion of the adhesion layer is between the first and second source contacts and conductively connects the first and second source contacts.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.