Optoelectronic semiconductor chip with two separate light emitting layers

US11094844B2 · kind B2 · utility

Assignee

• Osram OLED GMBH · DE

Inventors

• Andreas Rudolph · Dresden, DE
• Markus Broell · Cork, IE
• Wolfgang Schmid · Regensburg, DE
• Johannes Baur · Regensburg, DE
• Martin Rudolf Behringer · Regensburg, DE

Key dates

• Filing date: Feb 22, 2018
• Grant date: Aug 17, 2021
• Expiry date: Mar 9, 2038

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01S5/4087
• WIPO field: Optics
• WIPO sector: Instruments

Abstract

An optoelectronic semiconductor chip includes a p-type semiconductor region, an n-type semiconductor region, an active layer disposed between the p-type semiconductor region and the n-type semiconductor region and formed as a multiple quantum well structure and having alternating quantum well layers and barrier layers, the quantum well layers emitting a first radiation in a first wavelength range, and at least one further quantum well layer disposed outside the multiple quantum well structure that emits a second radiation in a second wavelength range, wherein the first wavelength range is in an infrared spectral range invisible to a human eye, and the second wavelength range includes wavelengths at least partially visible to the human eye.