Gate drive control method for SiC and IGBT power devices to control desaturation or short circuit faults
US11095281B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 23, 2019 |
| Grant date | Aug 17, 2021 |
| Priority date | — |
| Expiry date | Dec 23, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03K21/08
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A gate-drive controller for a power semiconductor device includes a master control unit (MCU) and one or more comparators that compare the output signal of the power semiconductor device to a reference value generated by the MCU. The MCU, in response to a turn-off trigger signal, generates a first intermediate drive signal for the power semiconductor device and generates a second intermediate drive signal, different from the first drive signal, when a DSAT signal indicates that the power semiconductor device is experiencing de-saturation. The MCU generates a final drive signal for the power semiconductor when the output signal of the one or more comparators indicates that the output signal of the power semiconductor device has changed relative to the reference value. The controller may also include a timer that causes the drive signals to change in predetermined intervals when the one or more comparators do not indicate a change.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.