Nitesh Satheesh
4Patents
2h-index
3Co-inventors
33Inventor score
Filing activity: Mar 18, 2016 → Jun 16, 2021
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US9490798B1 | Gate drive control system for SiC and IGBT power devices | Electricity | 15 | Active |
| US10530353B2 | Gate drive control system for SiC and IGBT power devices to control desaturation or short circuit faults | Electricity | 2 | Active |
| US11095281B2 | Gate drive control method for SiC and IGBT power devices to control desaturation or short circuit faults | Electricity | 1 | Active |
| US11764772B2 | Gate drive control method for SiC and IGBT power devices to control desaturation or short circuit faults | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.