Doped gallium oxide crystalline material and preparation method and application thereof
US11098416B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 10, 2019 |
| Grant date | Aug 24, 2021 |
| Priority date | — |
| Expiry date | Nov 18, 2039 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC01P2006/80
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A Group VB element doped with a β-gallium oxide crystalline material, and a preparation method and application thereof. The series doped with the β—Ga2O3 crystalline material is monoclinic, the space group is C2/m, the resistivity is in the range of 2.0×10−4 to 1×104Ω·cm, and/or the carrier concentration is in the range of 5×1012 to 7×1020/cm3. The preparation method comprises steps of: mixing M2O5 and Ga2O3 with a purity of 4N or more at molar ratio of (0.000000001-0.01):(0.999999999-0.99); an then performing crystal growth. The present invention can prepare a high-conductivity β-Ga2O3 crystalline material with n-type conductivity characteristics by conventional processes, providing a basis for applications thereof to electrically powered electronic devices, optoelectronic devices, photocatalysts or conductive substrates.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.