Surface emitting light source with lateral variant refractive index profile
US11099393B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 22, 2019 |
| Grant date | Aug 24, 2021 |
| Priority date | — |
| Expiry date | Nov 22, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H29/142
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A micro-LED includes a light emitting device that emits a light beam surface—normally and a plurality of semiconductor layers that modify the light beam. Each semiconductor layer includes a first lateral region and a second lateral region, where the first lateral region and the second lateral region are characterized by different respective refractive indices. The first lateral regions of the plurality of semiconductor layers are arranged in two or more different lateral areas of the semiconductor light source. The second lateral region in each semiconductor layer of the plurality of semiconductor layers includes a semiconductor material with a different respective composition. The plurality of semiconductor layers form a planar optical component that is used to, for example, collimate, converge, diverge, or deflect the light beam emitted by the light emitting device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.