Anurag Tyagi
30Patents
4h-index
44Co-inventors
59Inventor score
Filing activity: Feb 12, 2008 → Jul 15, 2022
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US8114698B2 | High light extraction efficiency nitride based light emitting diode by surface roughening | Electricity | 12 | Active |
| US9934213B1 | System and method for detecting and mapping data fields for forms in a financial management system | Physics | 12 | Active |
| US11120512B1 | System and method for detecting and mapping data fields for forms in a financial management system | Physics | 7 | Active |
| US9040326B2 | High light extraction efficiency nitride based light emitting diode by surface roughening | Electricity | 4 | Active |
| US8481991B2 | Anisotropic strain control in semipolar nitride quantum wells by partially or fully relaxed aluminum indium gallium nitride layers with misfit dislocations | Electricity | 4 | Active |
| US8044383B2 | Thin P-type gallium nitride and aluminum gallium nitride electron-blocking layer free gallium nitride-based light emitting diodes | Electricity | 3 | Active |
| US11749964B2 | Monolithic light source with integrated optics based on nonlinear frequency conversion | Electricity | 3 | Active |
| US10853567B2 | System and method for reliable extraction and mapping of data to and from customer forms | Electricity | 3 | Active |
| US8835200B2 | High light extraction efficiency nitride based light emitting diode by surface roughening | Electricity | 3 | Active |
| US9236530B2 | Miscut bulk substrates | Electricity | 3 | Active |
| US8227819B2 | Thin p-type gallium nitride and aluminum gallium nitride electron-blocking layer free gallium nitride-based light emitting diodes | Electricity | 3 | Active |
| US11099393B2 | Surface emitting light source with lateral variant refractive index profile | Electricity | 3 | Active |
| US11424289B2 | In situ selective etching and selective regrowth of epitaxial layer for surface recombination velocity reduction in light emitting diodes | Electricity | 2 | Active |
| US9646827B1 | Method for smoothing surface of a substrate containing gallium and nitrogen | Electricity | 2 | Active |
| US8541869B2 | Cleaved facet (Ga,Al,In)N edge-emitting laser diodes grown on semipolar bulk gallium nitride substrates | Electricity | 2 | Active |
| US9159553B2 | Semipolar or nonpolar nitride-based devices on partially or fully relaxed alloys with misfit dislocations at the heterointerface | Electricity | 1 | Active |
| US9653650B2 | Method and system for epitaxy processes on miscut bulk substrates | Electricity | 0 | Active |
| US11869922B2 | In situ selective etching and selective regrowth of epitaxial layer for surface recombination velocity reduction in light emitting diodes | Electricity | 0 | Active |
| US8853669B2 | Limiting strain relaxation in III-nitride hetero-structures by substrate and epitaxial layer patterning | Electricity | 0 | Active |
| US9077151B2 | Semi-polar III-nitride optoelectronic devices on M-plane substrates with miscuts less than +/-15 degrees in the C-direction | Emerging Cross-Sectional Technologies | 0 | Active |
| US9917422B2 | Semi-polar III-nitride optoelectronic devices on M-plane substrates with miscuts less than +/− 15 degrees in the C-direction | Emerging Cross-Sectional Technologies | 0 | Active |
| US11677042B2 | Regrowth of epitaxial layer for surface recombination velocity reduction in light emitting diodes | Electricity | 0 | Active |
| US11552452B2 | Semi-polar III-nitride optoelectronic devices on m-plane substrates with miscuts less than +/− 15 degrees in the c-direction | Emerging Cross-Sectional Technologies | 0 | Active |
| US8866126B2 | Anisotropic strain control in semipolar nitride quantum wells by partially or fully relaxed aluminum indium gallium nitride layers with misfit dislocations | Electricity | 0 | Active |
| US11972895B1 | Apparatus, system, and method for stepping up high voltages within small form factors via optical couplings including an array of photovoltaic cells optically coupled to parallelly connected light emitting devices via a transfer medium | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.