Apparatus comprising structures including contact vias and conductive lines, related methods, and memory devices

US11101171B2 · kind B2 · utility

Assignee

• Micron Technology, Inc. · US

Inventors

• Xiaosong Zhang · Boise, US
• Yongjun Jeff Hu · Boise, US
• David A. Kewley · Boise, US
• Md Zahid Hossain · Boise, US
• Michael J. Irwin · London, CA
• Daniel Billingsley · Round Rock, US
• Suresh Ramarajan · Boise, US
• Robert J. Hanson · Boise, US
• Biow Hiem Ong · Singapore, SG
• Keen Wah Chow · Singapore, SG

Key dates

• Filing date: Aug 16, 2019
• Grant date: Aug 24, 2021
• Expiry date: Aug 16, 2039

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L23/53257
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

An apparatus comprises a structure including an upper insulating material overlying a lower insulating material, a conductive element underlying the lower insulating material, and a conductive material comprising a metal line and a contact. The conductive material extends from an upper surface of the upper insulating material to an upper surface of the conductive element. The structure also comprises a liner material adjacent the metal line. A width of an uppermost surface of the conductive material of the metal line external to the contact is relatively less than a width of an uppermost surface of the conductive material of the contact. Related methods, memory devices, and electronic systems are disclosed.