Methods for manufacturing a memory array having strings of memory cells comprising forming bridge material between memory blocks
US11101210B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 25, 2019 |
| Grant date | Aug 24, 2021 |
| Priority date | — |
| Expiry date | Jan 28, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B43/35
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A memory array comprising strings of memory cells comprises laterally-spaced memory blocks individually comprising a vertical stack comprising alternating insulative tiers and conductive tiers. Operative channel-material strings of memory cells extend through the insulative tiers and the conductive tiers. Intervening material is laterally-between and longitudinally-along immediately-laterally-adjacent of the memory blocks. The intervening material comprises longitudinally-alternating first and second regions that individually have a vertically-elongated seam therein. The vertically-elongated seam in the first regions has a higher top than in the second regions. The seam tops in the second regions are elevationally-coincident with or below a bottom of an uppermost of the conductive tiers. Methods are disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.