Thin film resistor with punch-through vias
US11101212B2 · kind B2 · utility
0Cited by
3References
5Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 28, 2019 |
| Grant date | Aug 24, 2021 |
| Priority date | — |
| Expiry date | May 28, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L23/53266
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A device including a thin film resistor (TFR) structure. The TFR structure is accessible by one or more conductive vias that extend vertically from an upper metal layer to completely penetrate a TFR layer positioned thereunder. The conductive vias are coupled to one or more sidewalls of the TFR layer at or near the sites of penetration. The TFR structure can be manufactured by a method that includes etching a via trench completely through the TFR layer and a dielectric layer above the TFR layer, and filling the via trench with a conductor coupled to a sidewall of the TFR layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.