Patent · US Active

Memory cell arrangement and methods thereof

US11101291B2 · kind B2 · utility

8Cited by

2References

19Claims

0Family size

Assignee

Ferroelectric Memory GmbH · DE

Inventors

Menno Mennenga · Dresden, DE
Johannes Ocker · Dresden, DE

Key dates

Filing date	Jul 15, 2020
Grant date	Aug 24, 2021
Priority date	—
Expiry date	Jul 15, 2040

Classification

Technology area (CPC H)Electricity
CPC primaryH10B53/40
WIPO fieldComputer technology
WIPO sectorElectrical engineering

Abstract

A memory cell arrangement is provided that may include: a plurality of electrode layers, wherein each of the plurality of electrode layers comprises a plurality of through holes, each of the plurality of through holes extending from a first surface to a second surface of the respective electrode layer; a plurality of electrode pillars, wherein each of the plurality of electrode pillars comprises a plurality of electrode portions, wherein each of the plurality of electrode portions is disposed within a corresponding one of the plurality of through holes; wherein at least one remanent-polarizable portion is disposed in each of the plurality of through holes in a gap between the respective electrode layer and the respective electrode portion.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.