Fin field effect transistor (FinFET) device structure with air gap and method for forming the same
US11101385B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 19, 2018 |
| Grant date | Aug 24, 2021 |
| Priority date | — |
| Expiry date | Oct 6, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/0149
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for forming a FinFET device structure is provided. The method for forming a FinFET device structure includes forming a fin structure over a substrate and forming a gate structure across the fin structure. The method for forming a FinFET device structure also includes forming a first spacer over a sidewall of the gate structure and forming a second spacer over the first spacer. The method for forming a FinFET device structure further includes etching the second spacer to form a gap and forming a mask layer over the gate structure and the first spacer after the gap is formed. In addition, the mask layer extends into the gap in such a way that the mask layer and the fin structure are separated by an air gap in the gap.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.