Patent · US Active

Storage element

US11101430B2 · kind B2 · utility

0Cited by

0References

16Claims

0Family size

Assignee

COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES · FR

Inventors

Gabriele Navarro · Moirans, FR
Mathieu Bernard · Kerbarh, FR
Marie-Claire Cyrille · San Jose, US
Chiara Sabbione · Grenoble, FR

Key dates

Filing date	Aug 5, 2019
Grant date	Aug 24, 2021
Priority date	—
Expiry date	Aug 5, 2039

Classification

Technology area (CPC H)Electricity
CPC primaryH10N70/884
WIPO fieldComputer technology
WIPO sectorElectrical engineering

Abstract

A phase-change storage element including, in a first portion, a stack of amorphous layers, the thickness of each layer in the stack being smaller than or equal to 5 nm.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.