Patent · US Active

Fast memory for programmable devices

US11101804B2 · kind B2 · utility

1Cited by
5References
20Claims
0Family size

Assignee

Inventors

Key dates

Filing dateDec 11, 2019
Grant dateAug 24, 2021
Priority date
Expiry dateDec 11, 2039

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L2225/06527
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

An integrated circuit device may include a programmable fabric die having programmable logic fabric and configuration memory that may configure the programmable logic fabric. The integrated circuit device may also include a base die that may provide fabric support circuitry, including memory and/or communication interfaces as well as compute elements that may also be application-specific. The memory in the base die may be directly accessed by the programmable fabric die using a low-latency, high capacity, and high bandwidth interface.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.