Hybrid matching network topology
US11107661B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 9, 2019 |
| Grant date | Aug 31, 2021 |
| Priority date | — |
| Expiry date | Jul 9, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/24564
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
The present disclosure relates to plasma generation systems which utilize plasma for semiconductor processing. The plasma generation system disclosed herein employs a hybrid matching network. The plasma generation system includes a RF generator and a matching network. The matching network includes a first-stage to perform low-Q impedance transformations during high-speed variations in impedance. The matching network includes a second-stage to perform impedance matching for high-Q impedance transformations. The matching network further includes a sensor coupled to the first-stage and the second-stage to calculate the signals that are used to engage the first and second-stages. The matching network includes a first-stage network that is agile enough to tune each state in a modulated RF waveform and a second-stage network to tune a single state in a RF modulated waveform. The plasma generation system also includes a plasma chamber coupled to the matching network.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.