Gas phase etching device and gas phase etching apparatus
US11107706B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 2, 2019 |
| Grant date | Aug 31, 2021 |
| Priority date | — |
| Expiry date | Sep 27, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/67248
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Gas phase etching device and gas phase etching apparatus are provided. The gas phase etching device includes: a reaction chamber body, defining a space as a reaction chamber; a pedestal, disposed inside the reaction chamber for holding a workpiece; an inlet member, connected to the reaction chamber body for introducing etchants into the reaction chamber; a pressure regulating assembly, connected to the reaction chamber body for regulating a pressure inside the reaction chamber; a first temperature controller, connected to the reaction chamber body for controlling a temperature therein to a first temperature; and a second temperature controller, connected to the pedestal for controlling a temperature to a second temperature. The first temperature is a temperature that prevents the reaction chamber from being corroded by the etchants. The second temperature is a temperature under which the workpiece held by the pedestal satisfies a temperature requirement for directly performing a subsequent process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.