Method for manufacturing bonding pad in semiconductor device
US11107726B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 26, 2019 |
| Grant date | Aug 31, 2021 |
| Priority date | — |
| Expiry date | Sep 26, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76829
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for manufacturing a semiconductor device is provided. A substrate is provided, where a cover layer is formed on the substrate, a wiring layer is formed in the cover layer, a layer to be etched is formed on the cover layer, and the layer to be etched includes an adhesive layer. An exposure patterned film layer is formed on the layer to be etched. A first etching hole pattern is formed in the exposure patterned film layer. The layer to be etched is etched to form a blind hole by using the exposure patterned film layer as a mask. The exposure patterned film layer is trimmed to form a second etching hole pattern. The layer to be etched is further etched to form a bonding hole by using the trimmed exposure patterned film layer as a mask. A bonding pad is formed in the bonding hole.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.