Semiconductor device for detection of radiation and method of producing a semiconductor device for detection of radiation
US11107848B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 24, 2014 |
| Grant date | Aug 31, 2021 |
| Priority date | — |
| Expiry date | Feb 24, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2224/13024
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The semiconductor device for detection of radiation comprises a semiconductor substrate (1) with a main surface (11), a dielectric layer (6) comprising at least one compound of a semiconductor material, an integrated circuit (2) including at least one component sensitive to radiation (3), a wiring (4) of the integrated circuit embedded in an intermetal layer (8) of the dielectric layer (6), an electrically conductive through-substrate via (5) contacting the wiring, and an optical filter element (7) arranged immediately on the dielectric layer above the component sensitive to radiation. The dielectric layer comprises a passivation layer (9) at least above the through-substrate via, the passivation layer comprises a dielectric material that is different from the intermetal layer (8), and the wiring is arranged between the main surface and the passivation layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.