Semiconductor device
US11107909B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 10, 2019 |
| Grant date | Aug 31, 2021 |
| Priority date | — |
| Expiry date | Jul 24, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/136
Abstract
A collector layer, a base layer, and an emitter layer that are disposed on a substrate form a bipolar transistor. An emitter electrode is in ohmic contact with the emitter layer. The emitter layer has a shape that is long in one direction in plan view. A difference in dimension with respect to a longitudinal direction of the emitter layer between the emitter layer and an ohmic contact interface at which the emitter layer and the emitter electrode are in ohmic contact with each other is larger than a difference in dimension with respect to a width direction of the emitter layer between the emitter layer and the ohmic contact interface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.