Silicon carbide power device, driving circuit and control method
US11108388B1 · kind B1 · utility
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Key dates
| Filing date | Mar 2, 2020 |
| Grant date | Aug 31, 2021 |
| Priority date | — |
| Expiry date | Mar 2, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8325
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A silicon carbide power device controlled by a driver and comprises a gate-to-source voltage and a source voltage, wherein the source voltage decreases according to an increase of the gate-to-source voltage, or the source voltage increases according to a decrease of the gate-to-source voltage. Thus, a spike caused by a change of the gate-to-source voltage is suppressed, thereby suppressing the crosstalk phenomenon of the silicon carbide power device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.