Method of forming a semiconductor device and circuit therefor
US11108390B2 · kind B2 · utility
1Cited by
0References
20Claims
0Family size
Assignee
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Key dates
| Filing date | Jan 6, 2020 |
| Grant date | Aug 31, 2021 |
| Priority date | — |
| Expiry date | Jan 6, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH02M1/08
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
In one embodiment, a driver circuit is configured to form a Vgs of a transistor as a negative value during a time interval that a second transistor, connected to the first transistor, is being enabled.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.