Method for processing conductive structure
US11111134B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 7, 2019 |
| Grant date | Sep 7, 2021 |
| Priority date | — |
| Expiry date | Jan 7, 2039 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB81C2201/0132
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
The present disclosure provides a method for processing a conductive structure. The method includes the following steps of: forming on a first surface a groove concave from the first surface towards a second surface by means of dry etching; extending the groove from the second surface to form a via through a silicon base; and processing a conductive structure within the via. The method can be applied to a silicon base having a thickness larger than 300 μm. It breaks the limit on thickness that can be processed in the related art and is capable of providing electrical connectivity on both sides of a silicon base. The method is simple and highly reliable, has high processing efficiency and is applicable to mechanized production.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.