Semiconductor device structure with air gap structure and method for forming the same
US11114335B1 · kind B1 · utility
Assignee
Inventor
Key dates
| Filing date | Apr 14, 2020 |
| Grant date | Sep 7, 2021 |
| Priority date | — |
| Expiry date | Apr 14, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L23/485
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present disclosure provides a semiconductor device structure with an air gap structure and a method for forming the semiconductor device structure. The semiconductor device structure includes a first conductive contact and a second conductive contact disposed over a semiconductor substrate. The semiconductor device structure also includes a first dielectric layer surrounding the first conductive contact and the second conductive contact, and a second dielectric layer disposed over the first conductive contact, the second conductive contact and the first dielectric layer. The first dielectric layer is separated from the semiconductor substrate by a first air gap structure, the first dielectric layer is separated from the second dielectric layer by a second air gap structure, and the air gap structures reduce capacitive coupling between conductive features.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.