Semiconductor structure with ultra thick metal and manufacturing method thereof
US11114378B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 19, 2019 |
| Grant date | Sep 7, 2021 |
| Priority date | — |
| Expiry date | Jun 10, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2224/11
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present disclosure provides a semiconductor structure having an ultra thick metal (UTM). The semiconductor structure includes a substrate, a metal layer over the substrate, and an UTM over the metal layer. An area density of the UTM is greater than 40% and a thickness of the UTM is equal to or greater than 6 micrometer. The present disclosure provides a method for manufacturing a semiconductor structure having a UTM. The method includes patterning a dielectric layer with a plurality of trenches by a first mask, patterning a photoresist positioning on a mesa between adjacent trenches by a second mask, and selectively plating conductive materials in the plurality of trenches.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.